Erika Maeda

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Speaker, Author, Co-Author

Tue. Sep 18, 2018 4:00 PM - 6:00 PM PA (Event Hall)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[18p-PA6-19] High breakdown voltage of n-GaN MOS capacitors with HfSiO_x insulator

〇Erika Maeda^1,2, Toshihide Nabatame², Kazuya Yuge^1,2, Masafumi Hirose^1,2, Mari Inoue², Akihiko Ohi², Naoki Ikeda², Koji shiozaki³, Tomoji Ohishi¹ (1.SIT, 2.NIMS, 3.NU)