[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-21] Characteristics of SiO₂ / GaN Interface with Gallium Oxide Layer
by High Pressure Water Vapor Annealing

〇Ryota Ando¹, Mutsunori Uenuma¹, Masaaki Furukawa¹, Tengda Lin¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:HPWVA, SiO2/GaN, GaOx

本研究では高圧水蒸気処理(High Pressure Water Vapor Annealing : HPWVA)を用いて低温でGaN表面に極薄GaO_X層を形成させた試料に対してMOS特性を評価した．