Mapping of neutral-beam etching induced damages on GaN surfaces using scanning internal photoemission microscopy

Kenji Shiojima; Tetsuya Suemitsu; Takuya Ozaki; Seiji Samukawa

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

Tue. Sep 18, 2018 4:00 PM - 6:00 PM PA (Event Hall)

4:00 PM - 6:00 PM

[18p-PA6-4] Mapping of neutral-beam etching induced damages on GaN surfaces using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Tetsuya Suemitsu², Takuya Ozaki³, Seiji Samukawa³ (1.Univ. of Fukui, 2.CIES, Tohoku Univ., 3.IFS, Tohoku Univ.)

Keywords:GaN, Neutral-beam etching, Scanning internal photoemission microscopy

We characterized damages induced by neutral-beam etching on GaN surface by SIPM. SIPM demonstrated induced damages as an image and revealed that the neutral-beam etching induced smaller damaged than that of ICP etching.