[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-5] Comparison of traps in n-GaN grown by different VPE on GaN substrate

〇(M1)Syun Ito¹, Yutaka Tokuda¹, Tetsuo Narita², Taishi Kimura², Daisuke Nakamura², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol, 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ.)

Keywords:Deep Level Transient Spectroscopy, halogen free vapor phase epitaxy