[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-9] Evaluation of n-GaN surface roughness by low bias ICP-RIE

〇Kota Uzaki¹, Satoko Shinkai¹, Hideo Otsuki² (1.Kyutech., 2.Samco Inc.)

Keywords:GaN, ICP-RIE