Oral presentation

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

Wed. Sep 19, 2018 3:00 PM - 6:45 PM CE (Century Hall)

Masashi Kato(NITech), Taketomo Sato(Hokkaido Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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3:00 PM - 3:30 PM

[19p-CE-5] [JSAP Paper Award Speech] Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

〇Hajime Fujikura¹, Taichiro Konno¹, Takehiro Yoshida¹, Fumimasa Horikiri¹ (1.SCIOCS)

3:30 PM - 3:45 PM

[19p-CE-6] Advanced photo-assisted capacitance characterization of deep traps at insulator/wide-bandgap semiconductor interface

〇Atsushi Hiraiwa^1,4, Satoshi Okubo², Kiyotaka Horikawa², Hiroshi Kawarada^2,3 (1.RONLI, Waseda Univ., 2.Fac. Sci. Eng., Waseda Univ., 3.KMLMST, Waseda Univ., 4.IMaSS, Nagoya Univ.)

3:45 PM - 4:00 PM

△ [19p-CE-7] Characterization of Al₂O₃ MOS structures fabricated on high-temperature annealed GaN surfaces

〇Tatsuya Oyobiki¹, Tamotsu Hashizume¹ (1.RCIQE. Hokkaido Univ.)

4:00 PM - 4:15 PM

△ [19p-CE-8] Characterization of Al₂O₃ MOS structures fabricated on m-plane GaN surfaces

〇Shota Kaneki¹, Tamotsu Hashizume¹ (1.RCIQE, Hokkaido Univ.)

4:15 PM - 4:30 PM

[19p-CE-9] Synchrotron Radiation XPS Study of Thermal Oxidation of SiO₂/p-GaN Interface

〇Takahiro Yamada¹, Daiki Terashima¹, Mikito Nozaki¹, Hisashi Yamada², Tokio Takahashi², Mitsuaki Shimizu², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST, 3.JAEA)

4:30 PM - 4:45 PM

[19p-CE-10] Evaluation of Electrical Properties of SiO₂/p-GaN MOS Capacitors

〇Takahiro Yamada¹, Daiki Terashima¹, Mikito Nozaki¹, Hisashi Yamada², Tokio Takahashi², Mitsuaki Shimizu², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

5:00 PM - 5:15 PM

[19p-CE-11] Evaluation of Mg-implanted GaN by cathode luminescence

〇Susumu Saitoh¹, Takahasi Kazuteru¹, Salmon Michael E.², Shingu Kazue¹ (1.Nano Science Corp., 2.EAG Inc.)

5:15 PM - 5:30 PM

[19p-CE-12] Mg/N co-implantation and ultra-high pressure N₂ thermal activation process for p-doping into GaN

〇Hideki Sakurai^1,2,3, Shinji Yamada^1,2,3, Masato Omori¹, Yukihiro Furukawa³, Hideo Suzuki³, Michal Bockowski^1,4, Jun Suda^1,2, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.ULVAC ISET, 4.UNIPRESS)

5:30 PM - 5:45 PM

[19p-CE-13] Activation of Magnesium implanted in Ga-face GaN layer by Atmospheric Pressure Thermal-Plasma-Jet Irradiation

〇Hiroaki Hanafusa¹, Seiichiro Higashi¹, Koji Shiozaki² (1.Hiroshima Univ., 2.Nagoya Univ.)

5:45 PM - 6:00 PM

[19p-CE-14] Damage characterization of GaN substrate with hot implant process by TEM(２)

〇Junko Maekawa¹, Hitoshi Kawanowa¹, Masahiko Aoki¹, Katsumi Takahiro², Toshiyuki Isshiki² (1.Ion Technology Center Co.,Ltd, 2.Kyoto Institute of Technology)

6:00 PM - 6:15 PM

[19p-CE-15] Evaluation of Mg ion implanted GaN by photothermal deflection spectroscopy

〇Kiyotaka Fukuda^1,2, Shinya Takashima³, Takeyoshi Onuma², Tomohiro Yamaguchi², Tohru Honda², Akira Uedono⁴, Masatomo Sumiya¹ (1.NIMS, 2.Kogakuin Univ., 3.Fuji Electric Co. Ltd., 4.Tsukuba Univ.)

6:15 PM - 6:30 PM

△ [19p-CE-16] Evaluation of Al₂O₃ /n-, p-GaN samples by photothermal deflection spectroscopy

〇Kiyotaka Fukuda^1,2, Yuya Asai³, Keisuke Seki⁴, Liwen Sang¹, Akitaka Yoshigoe⁵, Akira Uedono³, Takamasa Ishigaki⁴, Takeyoshi Onuma², Tomohiro Yamaguchi², Tohru Honda², Masatomo Sumiya¹ (1.NIMS, 2.Kogakuin Univ., 3.Tsukuba Univ., 4.Hosei Univ., 5.JAEA)

6:30 PM - 6:45 PM

△ [19p-CE-17] Characterizations of Mg ion implantation in GaN at high-temperature

〇Masahiro Takahashi¹, Atsushi Tanaka^2,3, Shigeyoshi Usami¹, Yuto Ando¹, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMASS, 3.NIMS, 4.Nagoya Univ. ARC, 5.NU VBL)

Oral presentation

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 331 (International Conference Room)

Yusuke Kumazaki(Fujitsu Lab.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-331-1] High Sensitivity Visualization of Dopant Concentration in GaN nanowires by Phase-Shifting Electron Holography

〇Kiyotaka Nakano¹, Miko Matsumoto¹, Satoshi Anada¹, Kazuo Yamamoto¹, Si Young Bae², Atsushi Tanaka², Yoshio Honda², Yukari Ishikawa¹, Hiroshi Amano², Tsukasa Hirayama¹ (1.JFCC, 2.Nagoya Univ.)

9:15 AM - 9:30 AM

[20a-331-2] Comparison of carrier recombination in n- and p-type epi layers on GaN substrate

〇(M1)Shuai Zhu¹, Takato Asada¹, Kenji Ito², Kazuyoshi Tomita², Tetsuo Narita², Tetsu Kachi³, Masashi Kato^1,3 (1.Nitech, 2.Toyota Central R&D Labs, 3.Nagoya Univ.)

9:30 AM - 9:45 AM

[20a-331-3] Evaluation of low concentration Carbon in GaN by SIMS

〇Kazue Shingu¹, Masumi Obuchi¹, Richard Hockett², Larry Wang² (1.Nano Science, 2.EAG)

9:45 AM - 10:00 AM

[20a-331-4] Traps related to carbon in MOVPE p-GaN on GaN substrate

〇(M2)Tatsuya Kogiso¹, Hikaru Yoshida¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

10:00 AM - 10:15 AM

[20a-331-5] Effect of wafer off-angles on defect formation in drift layers grown on freestanding GaN substrates

〇Kenji Shiojima¹, Tomohiro Sagawa¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

10:15 AM - 10:30 AM

[20a-331-6] Threshold energy of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita¹, Jun Suda^1,2,3 (1.Kyoto Univ., 2.Nagoya Univ., 3.Nagoya Univ. IMaSS)

10:45 AM - 11:00 AM

△ [20a-331-7] Characterization of Hole Trap Occupancy Ratio under Sub-bandgap Light Irradiation for Accurate Evaluation of Hole Trap Concentration in n-Type GaN

〇Kazutaka Kanegae¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³, Masahiro Horita¹, Tsunenobu Kimoto¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.TOYOTA Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

11:00 AM - 11:15 AM

△ [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaN
Grown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor

〇(M1)Keisuke Sakao¹, Masahiro Horita², Jun Suda^1,2,3, Guanxi Piao⁴, Yuya Yamamoto⁴, Yoshiki Yano⁴, Koh Matsumoto⁴ (1.Nagoya Univ., 2.Kyoto Univ., 3.Nagoya Univ. IMASS, 4.Taiyo Nippon Sanso Corp.)

11:15 AM - 11:30 AM

△ [20a-331-9] Deep Electron Traps in Homoepitaxial N-type GaN Formed by Gamma-ray Irradiation

〇(M1)Keito Aoshima¹, Kazutaka Kanegae², Masahiro Horita², Jun Suda^1,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.Nagoya Univ. IMaSS)

11:30 AM - 11:45 AM

△ [20a-331-10] Changes in Threshold Voltage and Gate Current of p-GaN/AlGaN/GaN HEMTs Induced by Gamma-ray Irradiation

〇Koki Tsurimoto¹, Masahiro Horita², Jun Suda^1,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.Nagoya Univ. IMaSS)

11:45 AM - 12:00 PM

△ [20a-331-11] Temperature Dependence of Barrier Height for Ni/n-GaN Schottky Barrier Diodes with Various Donor Concentrations

〇(M1)Ryosuke Murase¹, Takuya Maeda², Kazutaka Kanegae², Masahiro Horita², Jun Suda^1,2,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.IMaSS)

12:00 PM - 12:15 PM

[20a-331-12] Mapping of facet growth n-GaN Schottky contacts using scanning internal photoemission microscopy

Masataka Maeda¹, 〇Kenji Shiojima¹, Kaori Kurihara² (1.Univ. of Fukui, 2.Mitsubishi Chemical)

12:15 PM - 12:30 PM

[20a-331-13] Defect formation at metal/semiconductor interfaces in electric field; First principles study

〇(M2)Riki Nagasawa¹, Takashi Nakayama¹ (1.Chiba Univ.)

Oral presentation

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

Thu. Sep 20, 2018 1:45 PM - 5:15 PM 331 (International Conference Room)

Kenji Shiojima(Univ. of Fukui), Masashi Kato(NITech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [20p-331-1] Electric characteristics evaluation of pn diode with vertical deep etched mesa structure and avalanche capability

〇Hayata Fukushima¹, Shigeyoshi Usami¹, Yuto Ando¹, Atsushi Tanaka^2,5, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, 3.ARC, 4.VBL, 5.NIMS)

2:00 PM - 2:15 PM

△ [20p-331-2] Growth condition dependency of reverse leakage current of pn diode on free-standing GaN substrate II

〇Shigeyoshi Usami¹, Hayata Fukushima¹, Yuto Ando¹, Atsushi Tanaka^2,3, Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,4,5 (1.Nagoya Univ., 2.IMaSS, 3.NIMS, 4.ARC, 5.VBL)

2:15 PM - 2:30 PM

[20p-331-3] Characterization of a Shockley-Read-Hall lifetime in homoepitaxial p-GaN
based on the analysis of the recombination current in GaN p-n junction diodes

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.TOYOTA Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

2:30 PM - 2:45 PM

[20p-331-4] Temperature dependence of Avalanche multiplication in GaN p-n junction diodes
measured by using the light absorption due to Franz-Keldysh effect

2:45 PM - 3:00 PM

[20p-331-5] Effect of strained layer superlattice (SLS) on breakdown voltage of fully-vertical GaN p-n diodes on Si

〇(M1)Naoki Torii¹, Debaleen Biswas¹, Yamamoto Keiji¹, Egawa Takashi¹ (1.Nagoya Inst. of Tech.)

3:00 PM - 3:15 PM

[20p-331-6] Anisotropic wet etching of selectively grown GaN for applications to three dimensional channel transistors

〇Hayato Mukai¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech., 2.AIST)

3:30 PM - 3:45 PM

[20p-331-7] The mechanism of GaN photoelectrochemical (PEC) etching

〇FUMIMASA HORIKIRI¹, Yoshinobu Narita¹, Takehiro Yoshida¹ (1.SCIOCS)

3:45 PM - 4:00 PM

[20p-331-8] Mesa-structure GaN p-n diodes fabricated by photoelectrochemical (PEC) etching

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

4:00 PM - 4:15 PM

[20p-331-9] Excellent potential of photoelectrochemical (PEC) etching for the vertical GaN superjunction devices

〇FUMIMASA HORIKIRI¹, Hiroshi Ohta², Naomi Asai², Yoshinobu Narita¹, Takehiro Yoshida¹, Tomoyoshi Mishima² (1.SCIOCS, 2.Hosei Univ.)

4:15 PM - 4:30 PM

[20p-331-10] Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure

〇Koushi Hotta¹, Yumiko Tomizuka¹, Kousuke Itagaki¹, Isao Makabe², Shigeki Yoshida², Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries)

4:30 PM - 4:45 PM

[20p-331-11] Effects of surface treatment using TMAH on p-GaN/metal contact characteristics

〇Takashi Shimizu¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

4:45 PM - 5:00 PM

[20p-331-12] Size effects of dot-array planar patterns on the contact resistance reduction technique for AlGaN/GaN HEMTs by introducing uneven AlGaN layer

〇Shinnosuke Hisanaga¹, Watanabe Takumi¹, Hoshii Takuya¹, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Iwai You¹, Tutui Kazuo¹ (1.Tokyo Tech)

5:00 PM - 5:15 PM

[20p-331-13] GaN Surface Cleaning and In-situ formation of SiO₂/GaN structure using Remote Plasma

〇Noriyuki Taoka¹, Nguyen Xuan Truyen^1,2, Taishi Yamamoto^1,2, Akio Ohta², Hisashi Yamada¹, Tokio Takahashi¹, Mitsuhisa Ikeda², Katsunori Makihara², Seiichi Miyazaki^2,3,1, Mitsuaki Shimizu^1,3 (1.AIST-NU GaN-OIL, 2.Nagoya Univ., 3.IMaSS)

Oral presentation

[21a-331-1~12] 13.7 Compound and power electron devices and process technology

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 331 (International Conference Room)

Tetsuo Narita(Toyota Central R&D Labs., Inc.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-331-1] Characterization of Breakdown Field in Fe-doped Semi-insulating GaN Substrates

〇(M1)Atsuki Aoai¹, Kosuke Suzuki¹, Joel Asubar¹, Hirokuni Tokuda¹, Narihito Okada², Kazuyuki Tadatomo², Masaaki Kuzuhara¹ (1.Fukui Univ., 2.Yamaguchi Univ.)

9:15 AM - 9:30 AM

[21a-331-2] Reverse bias annealing in N-polar GaN MIS-HEMTs

〇Tetsuya Suemitsu¹, Kiattiwut Prasertsuk², Tomoyuki Tanikawa², Takeshi Kimura², Shigeyuki Kuboya², Takashi Matsuoka² (1.CIES, Tohoku Univ., 2.IMR, Tohoku Univ.)

9:30 AM - 9:45 AM

[21a-331-3] Effects of H₂ ambient annealing on electrical properties of ALD-Al₂O₃/AlGaN/GaN MIS-HEMTs

〇(M1)Keita Furuoka¹, Kubo Toshiharu¹, Egawa Takashi¹ (1.Nagoya Inst. of Tech.)

9:45 AM - 10:00 AM

[21a-331-4] A study of gate metal structure for InAlN/AlN/GaN HEMTs (II)

〇Yoshimi Yamashita¹, Yoshida Tomohiro², Makabe Isao², Watanabe Issei¹, Inoue Kazutaka², Kasamatsu Akifumi¹ (1.NICT, 2.SEI)

10:00 AM - 10:15 AM

△ [21a-331-5] The plane orientation dependence of mobility in lateral MIS FET fabricated on GaN substrate.

〇Yuto Ando¹, Tohru Nakamura², Manato Deki², Atsushi Tanaka^2,3, Shigeyoshi Usami¹, Ousmane 1 Barry¹, Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.Nagoya Univ. Imass, 3.NIMS, 4.Nagoya Univ. ARC, 5.Nagoya Univ. VBL)

10:15 AM - 10:30 AM

△ [21a-331-6] Characterization of AlGaN/GaN MOS-HEMTs with Gate Field Plate

〇(M1)Takashi Nishitani¹, Ryota Yamaguchi¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Hirokuni¹ (1.Univ. of Fukui)

10:45 AM - 11:00 AM

△ [21a-331-7] Gate controllability in Al₂O₃/AlGaN/GaN MOS HEMT grown on GaN Substrates

〇Yuji Ando¹, Syota Kaneki¹, Tamotsu Hashizume¹ (1.Hokkaido Univ.)

11:00 AM - 11:15 AM

△ [21a-331-8] Device characteristics of AlGaN-channel HFETs employing quaternary AlGaInN barrier layers

〇Daiki Hosomi¹, Keita Furuoka¹, Heng Chen¹, Toshiharu Kubo¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

11:15 AM - 11:30 AM

[21a-331-9] AlGaN/GaN HEMTs fabricated using AlGaN regrowth on RIE-GaN surfaces

〇Akio Yamamoto¹, Keito Kanatani¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

11:30 AM - 11:45 AM

△ [21a-331-10] Fabrication of enhancement-mode AlGaN/GaN HEMTs using an AlGaN regrown layer

〇(M2)Keito Kanatani¹, Akio Yamamoto¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

11:45 AM - 12:00 PM

[21a-331-11] Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs

〇(M1)Shoichi Murata¹, Masataka Sasada¹, Asubar Joel¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

12:00 PM - 12:15 PM

[21a-331-12] Effect of Interface State at AlGaN/GaN Interfaces on I-V characteristics of GaN p-MOSFETs on Polarization-Junction Substrates

〇Shuma Tsuruta¹, Takuya Hoshii¹, Akira Nakajima², Shin-ichi Nishizawa³, Hiromichi Ohashi¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST, 3.Kyushu Univ.)

Oral presentation

[21p-331-1~8] 13.7 Compound and power electron devices and process technology

Fri. Sep 21, 2018 1:45 PM - 4:00 PM 331 (International Conference Room)

Toshiharu Kubo(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[21p-331-1] Temperature Dependence of Switching Response of NiO/β-Ga₂O₃Heterojunction Diodes

〇Shinji Nakagomi¹, Kentaro Kikuchi¹, Koji Yano², Yoshihiro Kokubun¹ (1.Ishinomaki Senshu, 2.Univ. of Yamanashi)

2:00 PM - 2:15 PM

[21p-331-2] Vertical Ga₂O₃ Schottky Barrier Diodes with a Guard Ring Fabricated by Using Nitrogen-Ion Implantation

〇Chiahung Lin¹, ManHoi Wong¹, Mayuko Sato², Nao Takekawa², Keita Konishi², Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. of Agri. & Tech.)

2:15 PM - 2:30 PM

[21p-331-3] Consideration on the Impact of Oxygen Annealing on SiO₂/β-Ga₂O₃ MOS Interface Characteristics

Eiki Suzuki¹, Mizuki Nishida¹, 〇Koji Kita¹ (1.Univ. of Tokyo)

2:30 PM - 2:45 PM

[21p-331-4] Rectification Properties of α-Ir₂O₃/α-Ga₂O₃ pn junction diodes

〇Kentaro Kaneko¹, Shu Takemoto¹, Shin-ichi Kan¹, Isao Takahashi², Masahiro Sugimoto², Takashi Shinohe², Shizuo Fujita¹ (1.Kyoto Univ., 2.FLOSFIA Inc.)

3:00 PM - 3:15 PM

[21p-331-5] Fabrication of Field-Effect Transistors on Diamond Substrate Bonded to Si

〇Jianbo Liang¹, Satoshi Masuya², Daiki Fujii³, Seong-woo Kim³, Makoto Kasu², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.Saga Univ., 3.Adamant Namiki Co., Ltd.)

3:15 PM - 3:30 PM

[21p-331-6] Diamond MOS FET characterisitcs after DC stress studied by TCAD

〇Toshiyuki Oishi¹, Takuya Kamogawa¹, Makoto Kasu¹ (1.Saga Univ.)

3:30 PM - 3:45 PM

[21p-331-7] Improvement in GaAsSb/InGaAs double-gate tunnel FET using Al₂O₃/ZrO₂ for gate insulator

〇(M2)Ryosuke Aonuma¹, Kise Nobukazu¹, Miyamoto Yasuyuki¹ (1.Tokyo Tech.)

3:45 PM - 4:00 PM

[21p-331-8] Fundamental study on reducing on-resistance by introducing strain into silicon vertical power device

〇Takeya Inoue¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutui¹ (1.Tokyo Tech)

Poster presentation

[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

Tue. Sep 18, 2018 4:00 PM - 6:00 PM PA (Event Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[18p-PA6-1] Activation of ion-implanted Mg in GaN by flash lamp annealing

〇Masato Ohmori¹, Takahiro Yamada², Hideaki Tanimura², Shinichi Kato², Naotaka Iwata³, Kouji Shiozaki¹ (1.Nagoya Univ. IMaSS, 2.SCREEN Semiconductor Solutions Co., Ltd., 3.Toyota Tech. Inst.)

4:00 PM - 6:00 PM

[18p-PA6-2] Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before High-Temperature Annealing

〇(M1)Ryo Kamoshida¹, Kei Uetake¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

4:00 PM - 6:00 PM

[18p-PA6-3] Impact of Surface Treatment for GaN on Surface Fermi Level Position and Metal-Work-Function Dependence of Schottky Barrier Height

〇(M1)Kazuki Isobe¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

4:00 PM - 6:00 PM

[18p-PA6-4] Mapping of neutral-beam etching induced damages on GaN surfaces using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Tetsuya Suemitsu², Takuya Ozaki³, Seiji Samukawa³ (1.Univ. of Fukui, 2.CIES, Tohoku Univ., 3.IFS, Tohoku Univ.)

4:00 PM - 6:00 PM

[18p-PA6-5] Comparison of traps in n-GaN grown by different VPE on GaN substrate

〇(M1)Syun Ito¹, Yutaka Tokuda¹, Tetsuo Narita², Taishi Kimura², Daisuke Nakamura², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol, 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ.)

4:00 PM - 6:00 PM

[18p-PA6-6] Characterization of processed n-GaN surface using an electrochemical impedance spectroscopy

〇Kentaro Takeda¹, Masachika Toguchi¹, Taketomo Sato¹ (1.RCIQE,Hokkaido Univ.)

4:00 PM - 6:00 PM

[18p-PA6-7] Generation and migration of plasma-induced defects in p-GaN

〇(M1)Masamichi Annen¹, Seiji Nakamura¹ (1.Tokyo Metropolitan Univ.)

4:00 PM - 6:00 PM

[18p-PA6-8] Characterization of plasma-induced defects in p-GaN

〇(M1)Tomoya Imai¹, Seiji Nakamura¹ (1.Tokyo Metropolitan Univ.)

4:00 PM - 6:00 PM

[18p-PA6-9] Evaluation of n-GaN surface roughness by low bias ICP-RIE

〇Kota Uzaki¹, Satoko Shinkai¹, Hideo Otsuki² (1.Kyutech., 2.Samco Inc.)

4:00 PM - 6:00 PM

[18p-PA6-10] Effect of selective dryetching on performances of p-GaN gate AlGaN/GaN high electron mobility transistor

〇(M1)Takaaki Kondou¹, Yoshihiko Akazawa¹, Naotaka Iwata¹ (1.Toyota Tech. Inst)

4:00 PM - 6:00 PM

[18p-PA6-11] Light pulse width dependence of drain current MCTS spectra in AlGaN/GaN HEMT

〇(M1)Kazuya Tamura¹, Yutaka Tokuda¹, Siew Chuen Foo², Geok Ing Ng², Nethaji Dharmarasu², Radhakrishnan K², Subramaniam Arulkumaran^2,3 (1.Aichi Inst. of Technol., 2.Nanyang Technological University, 3.Nagoya University)

4:00 PM - 6:00 PM

[18p-PA6-12] Monte Carlo Simulation of Cryogenic InGaAs/InAs/InGaAs Channel HEMTs

〇Akira Endoh¹, Issei Watanabe¹, Akifumi Kasamatsu¹, Takashi Mimura¹ (1.NICT)

4:00 PM - 6:00 PM

[18p-PA6-13] Influence of surface cleaning on electrical characteristics of β-Ga₂O₃/Al₂O₃/Pt MOS capacitors

〇(B)Masafumi Hirose^1,2, Toshihide Nabatame², Kazuya Yuge^1,2, Erika Maeda^1,2, Akihiko Ohi², Naoki Ikeda², Yoshihiro Irokawa², Yasuo Koide², Tomoji Ohishi¹ (1.SIT, 2.NIMS)

4:00 PM - 6:00 PM

[18p-PA6-14] Photoluminescence properties from SiO₂/Ga₂O₃/GaN structure formed with remote plasma

〇Noriharu Takada¹, Noriyuki Taoka², Akio Ohta¹, Taishi Yamamoto^1,2, Truyen Nguyen Xuan^1,2, Hisashi Yamada², Tokio Takahashi², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mitsuaki Shimizu^2,3, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.AIST GaN-OIL, 3.Nagoya Univ. IMaSS)

4:00 PM - 6:00 PM

[18p-PA6-15] Evaluation of Ga-oxide layers on GaN layer surface and MOS interface by XPS

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Daisuke Mori¹, Hirotaka Suda¹, Masaharu Edo¹ (1.Fuji Electric)

4:00 PM - 6:00 PM

[18p-PA6-16] CV characteristics of p-GaN/SiO2 MOS capacitors

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Yuta Fukushima¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Yamanashi Univ.)

4:00 PM - 6:00 PM

△ [18p-PA6-17] Effects of Annealing Time in High Pressure Water Vapor Annealing for ALD-Al₂O₃/GaN MOS

〇(M2)Tsubasa Nakamura¹, Mutsunori Uenuma¹, Yuta Fujimoto¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

4:00 PM - 6:00 PM

[18p-PA6-18] Properties of SiO₂/InAlN interface having ultrathin Al₂O₃ interlayer (2)

〇(M2)Shouhei Kitajima¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ)

4:00 PM - 6:00 PM

[18p-PA6-19] High breakdown voltage of n-GaN MOS capacitors with HfSiO_x insulator

〇Erika Maeda^1,2, Toshihide Nabatame², Kazuya Yuge^1,2, Masafumi Hirose^1,2, Mari Inoue², Akihiko Ohi², Naoki Ikeda², Koji shiozaki³, Tomoji Ohishi¹ (1.SIT, 2.NIMS, 3.NU)

4:00 PM - 6:00 PM

[18p-PA6-20] Comprehensive Study of Native Oxides on GaN(0001)

〇Yoshihiro Irokawa¹, Taku T. Suzuki¹, Kazuya Yuge¹, Akihiko Ohi¹, Toshihide Nabatame¹, Koji Kimoto¹, Tsuyoshi Ohnishi¹, Kazutaka Mitsuishi¹, Yasuo Koide¹ (1.NIMS)

4:00 PM - 6:00 PM

[18p-PA6-21] Characteristics of SiO₂ / GaN Interface with Gallium Oxide Layer
by High Pressure Water Vapor Annealing

〇Ryota Ando¹, Mutsunori Uenuma¹, Masaaki Furukawa¹, Tengda Lin¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

4:00 PM - 6:00 PM

[18p-PA6-22] Investigation of silicon-based insulator films by surface-wave plasma enhanced chemical vapor deposition for nitride semiconductor device

〇Makoto Baba¹, Hiroshi Okada¹, Masakazu Furukawa², Keisuke Yamane¹, Hiroto Sekiguchi¹, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.ARLC)

4:00 PM - 6:00 PM

[18p-PA6-23] Study on Device Isolation of GaN-based Heterostructure Devices by Ion Implantation

〇Kento Nakamura¹, Baba Makoto¹, Okada Hiroshi¹, Furukawa Masakazu², Sekiguchi Hiroto¹, Yamane Keisuke¹, Wakahara Akihiro¹ (1.Toyohashi Univ. Tech., 2.ARLC)

4:00 PM - 6:00 PM

[18p-PA6-24] Proposal of N-polarity GaN/AlN field effect transistor

〇Narihito Okada¹, Tatsuya Isono¹, Hideyuki Itakura¹, Tadatoshi Ito², Ryota Sakamoto², Toshifumi Nomura², Yongzhao Yao³, Yukari Ishikawa³, Kazuyuki Tadatomo¹ (1.Grad. School Yamaguchi Univ., 2.Yamaguchi Univ., 3.JFCC)

4:00 PM - 6:00 PM

[18p-PA6-25] Reduction in contact resistance on n-type AlN by formation of graded-AlGaN cap layer: Influence of polarization charge in graded AlGaN layer

〇Masanobu Hiroki¹, Kazuhide Kumakura¹ (1.NTT BRL)

4:00 PM - 6:00 PM

[18p-PA6-26] Hysteresis behavior of GaN-MOSFETs

〇Katsunori Ueno¹, Hideaki Matsuyama¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Elecrtric co., 2.Univ. of Yamanashi)

4:00 PM - 6:00 PM

△ [18p-PA6-27] 1.2 kV class Normally-off GaN Polarization Super Junction (PSJ) Transistors

〇Yuta Isa¹, Takeru Saito¹, Fumihiko Nakamura¹, Yusuke Kamiyama¹, Shuichi Yagi¹, Hiroji Kawai¹, Atsushi Tanaka², Yoshio Honda², Hiroshi Amano² (1.POWDEC K.K., 2.Nagoya Univ. IMaSS)

4:00 PM - 6:00 PM

[18p-PA6-28] Evaluation of Thermal Resistance of GaN-on-Diamond Substrate

〇Koji Yoshitsugu¹, Takashi Matsuda¹, Keisuke Nakamura¹, Eiji Yagyu¹, Mikio Yamamuka¹ (1.Mitsubishi Electric Corp.)

4:00 PM - 6:00 PM

[18p-PA6-29] Structure characterization of Al/Diamond bonding interface fabricated by surface activated bonding

〇(M1)Shinji Kanda¹, Shoji Yamajo¹, Martin Kuball², Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ., 2.Univ. of Bristol)

4:00 PM - 6:00 PM

[18p-PA6-30] GaN High Frequency Wireless Power Transmission with Nd-Fe-N Coil

〇Toshihide Ide¹, Nobuyoshi Imaoka¹, Kimihiro Ozaki¹, Mitsuaki Shimizu¹, Noriyuki Takada¹ (1.AIST)

Sessions

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

△ [19p-CE-7] Characterization of Al2O3 MOS structures fabricated on high-temperature annealed GaN surfaces

△ [19p-CE-8] Characterization of Al2O3 MOS structures fabricated on m-plane GaN surfaces

△ [19p-CE-16] Evaluation of Al2O3 /n-, p-GaN samples by photothermal deflection spectroscopy

△ [19p-CE-17] Characterizations of Mg ion implantation in GaN at high-temperature

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

△ [20a-331-7] Characterization of Hole Trap Occupancy Ratio under Sub-bandgap Light Irradiation for Accurate Evaluation of Hole Trap Concentration in n-Type GaN

△ [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaNGrown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor

△ [20a-331-9] Deep Electron Traps in Homoepitaxial N-type GaN Formed by Gamma-ray Irradiation

△ [20a-331-10] Changes in Threshold Voltage and Gate Current of p-GaN/AlGaN/GaN HEMTs Induced by Gamma-ray Irradiation

△ [20a-331-11] Temperature Dependence of Barrier Height for Ni/n-GaN Schottky Barrier Diodes with Various Donor Concentrations

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

△ [20p-331-1] Electric characteristics evaluation of pn diode with vertical deep etched mesa structure and avalanche capability

△ [20p-331-2] Growth condition dependency of reverse leakage current of pn diode on free-standing GaN substrate II

[21a-331-1~12] 13.7 Compound and power electron devices and process technology

△ [21a-331-5] The plane orientation dependence of mobility in lateral MIS FET fabricated on GaN substrate.

△ [21a-331-6] Characterization of AlGaN/GaN MOS-HEMTs with Gate Field Plate

△ [21a-331-7] Gate controllability in Al2O3/AlGaN/GaN MOS HEMT grown on GaN Substrates

△ [21a-331-8] Device characteristics of AlGaN-channel HFETs employing quaternary AlGaInN barrier layers

△ [21a-331-10] Fabrication of enhancement-mode AlGaN/GaN HEMTs using an AlGaN regrown layer

[21p-331-1~8] 13.7 Compound and power electron devices and process technology

[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

△ [18p-PA6-17] Effects of Annealing Time in High Pressure Water Vapor Annealing for ALD-Al2O3/GaN MOS

△ [18p-PA6-27] 1.2 kV class Normally-off GaN Polarization Super Junction (PSJ) Transistors

Authentication

△ [19p-CE-7] Characterization of Al₂O₃ MOS structures fabricated on high-temperature annealed GaN surfaces

△ [19p-CE-8] Characterization of Al₂O₃ MOS structures fabricated on m-plane GaN surfaces

△ [19p-CE-16] Evaluation of Al₂O₃ /n-, p-GaN samples by photothermal deflection spectroscopy

△ [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaN
Grown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor

△ [21a-331-7] Gate controllability in Al₂O₃/AlGaN/GaN MOS HEMT grown on GaN Substrates

△ [18p-PA6-17] Effects of Annealing Time in High Pressure Water Vapor Annealing for ALD-Al₂O₃/GaN MOS