The 79th JSAP Autumn Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

Thu. Sep 20, 2018 1:45 PM - 5:15 PM 331 (International Conference Room)

Kenji Shiojima(Univ. of Fukui), Masashi Kato(NITech)

4:30 PM - 4:45 PM

[20p-331-11] Effects of surface treatment using TMAH on p-GaN/metal contact characteristics

〇Takashi Shimizu1, Takuya Hoshii1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Hiroshi Iwai1, Kazuo Tsutsui1 (1.Tokyo Tech)

Keywords:Gallium nitride, contact, p-type GaN