[20p-331-1~13] 13.7 Compound and power electron devices and process technology

[20p-331-12] Size effects of dot-array planar patterns on the contact resistance reduction technique for AlGaN/GaN HEMTs by introducing uneven AlGaN layer

〇Shinnosuke Hisanaga¹, Watanabe Takumi¹, Hoshii Takuya¹, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Iwai You¹, Tutui Kazuo¹ (1.Tokyo Tech)

Keywords:semiconductor, AlGaN/GaN HEMT