Takuya Maeda

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 5:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

2:15 PM - 2:30 PM

[20p-331-3] Characterization of a Shockley-Read-Hall lifetime in homoepitaxial p-GaN
based on the analysis of the recombination current in GaN p-n junction diodes

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.TOYOTA Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

2:30 PM - 2:45 PM

[20p-331-4] Temperature dependence of Avalanche multiplication in GaN p-n junction diodes
measured by using the light absorption due to Franz-Keldysh effect

Fri. Sep 21, 2018 9:00 AM - 12:30 PM 141 (141+142)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

11:15 AM - 11:30 AM

[21a-141-9] Phonon-assisted optical absorption due to the Franz-Keldysh effect
in a 4H-SiC p-n junction diode under high reverse bias voltage

〇Takuya Maeda¹, Xilun Chi¹, Masahiro Horita¹, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)