[20a-331-1~13] 13.7 Compound and power electron devices and process technology

[20a-331-3] Evaluation of low concentration Carbon in GaN by SIMS

〇Kazue Shingu¹, Masumi Obuchi¹, Richard Hockett², Larry Wang² (1.Nano Science, 2.EAG)

Keywords:GaN, SIMS

Low level carbon in n-GaN grown by HVPE on GaN substrate was evaluated using the Raster Change method by SIMS. Net Carbon concentration at the range of 10¹⁴ was detected and different carbon levels in six samples were observed. The detection limit of Carbon achieved was better than 1x10¹⁴.