The 79th JSAP Autumn Meeting, 2018

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Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[21p-331-1~8] 13.7 Compound and power electron devices and process technology

Fri. Sep 21, 2018 1:45 PM - 4:00 PM 331 (International Conference Room)

Toshiharu Kubo(Nagoya Inst. of Tech.)

3:15 PM - 3:30 PM

[21p-331-6] Diamond MOS FET characterisitcs after DC stress studied by TCAD

〇Toshiyuki Oishi1, Takuya Kamogawa1, Makoto Kasu1 (1.Saga Univ.)

Keywords:Diamond, MOS FET

Diamond MOS FET characteristics after DC stress have been studied by TCAD. Degradation of fixed charge and hole mobility were considerd to decrease drain current and on resistance which were obserbed in experimental results.