[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-26] Hysteresis behavior of GaN-MOSFETs

〇Katsunori Ueno¹, Hideaki Matsuyama¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Elecrtric co., 2.Univ. of Yamanashi)

Keywords:GaN, MOSFET, hysteresis

Normally-off characteristic of insulated gate is strongly desired for GaN based FETs. For this purpose MOS channel is one of the most important technologies. So far, we have reported the interfacial layer closely affect the channel mobility and its hysteresis. The hysteresis characteristic should be minimized for the device application. In this report, we will discuss the hysteresis characteristics depending on the gate bias.