[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-25] Reduction in contact resistance on n-type AlN by formation of graded-AlGaN cap layer: Influence of polarization charge in graded AlGaN layer

〇Masanobu Hiroki¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:AlN

We have found the reduction in effective contact resistance of n-type AlN using graded AlGaN layer. In this study, the relationship between the graded-AlGaN thickness and the electrical conductivity is clarified. We found the decrease in the conductivity with increasing the graded-layer thickness. It probably resuts from the incrase in the density of negative charge induced by polarization doping.