[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-24] Proposal of N-polarity GaN/AlN field effect transistor

〇Narihito Okada¹, Tatsuya Isono¹, Hideyuki Itakura¹, Tadatoshi Ito², Ryota Sakamoto², Toshifumi Nomura², Yongzhao Yao³, Yukari Ishikawa³, Kazuyuki Tadatomo¹ (1.Grad. School Yamaguchi Univ., 2.Yamaguchi Univ., 3.JFCC)

Keywords:Nitride semiconductor electronic devices

We proposed nitrogen-polar GaN/AlN field effect transistor. The band diagram and generation of two dimensional electron gas (2DEG) was analyzed by FETIS from STR. Although the +c-polarity GaN/AlN structure showed the two dimensional hole gas, nitrogen-polar GaN/AlN structure showed 2DEG.