[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-23] Study on Device Isolation of GaN-based Heterostructure Devices by Ion Implantation

〇Kento Nakamura¹, Baba Makoto¹, Okada Hiroshi¹, Furukawa Masakazu², Sekiguchi Hiroto¹, Yamane Keisuke¹, Wakahara Akihiro¹ (1.Toyohashi Univ. Tech., 2.ARLC)

Keywords:nitride semiconductor, semiconductor process engineering