[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-22] Investigation of silicon-based insulator films by surface-wave plasma enhanced chemical vapor deposition for nitride semiconductor device

〇Makoto Baba¹, Hiroshi Okada¹, Masakazu Furukawa², Keisuke Yamane¹, Hiroto Sekiguchi¹, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.ARLC)

Keywords:Nitride semiconductor, CVD, silicon-based insulator