Yuji Ando

→ Search for Yuji Ando in Google Scholar

Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21a-331-1~12] 13.7 Compound and power electron devices and process technology

10:45 AM - 11:00 AM

△ [21a-331-7] Gate controllability in Al₂O₃/AlGaN/GaN MOS HEMT grown on GaN Substrates

〇Yuji Ando¹, Syota Kaneki¹, Tamotsu Hashizume¹ (1.Hokkaido Univ.)