[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-16] CV characteristics of p-GaN/SiO2 MOS capacitors

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Yuta Fukushima¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Yamanashi Univ.)

Keywords:semiconductor, p-GaN, CV characteristics

MOS interface characteristics are important for MOSFET, and the SiO2 /p-GaN interface is evaluated from the CV characteristics of the MOS capacitor. As a result, it was suggested that a large and deep hole trap exists at the interface.