[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

△ [18p-PA6-17] Effects of Annealing Time in High Pressure Water Vapor Annealing for ALD-Al₂O₃/GaN MOS

〇(M2)Tsubasa Nakamura¹, Mutsunori Uenuma¹, Yuta Fujimoto¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:GaN, High Pressure Water Vapor Annealing, Interface characteristics

To realize high performance GaN-based MOS transistor, high quality MOS interface and gate insulator are required. We have proposed high pressure water vapor annealing (HPWVA) as a post deposition treatment. HPWVA has a lower annealing temperature and is characterized by a strong oxidizability of the hydroxide ion. The GaN MOS characteristics were effectively improved by the HPWVA. This study focuses on the effects of annealing time in HPWVA on Al₂O₃/GaN by evaluating the electrical characteristics of the MOS structure.