Keito Aoshima

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

11:15 AM - 11:30 AM

△ [20a-331-9] Deep Electron Traps in Homoepitaxial N-type GaN Formed by Gamma-ray Irradiation

〇(M1)Keito Aoshima¹, Kazutaka Kanegae², Masahiro Horita², Jun Suda^1,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.Nagoya Univ. IMaSS)