Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 331 (International Conference Room)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-331-1] High Sensitivity Visualization of Dopant Concentration in GaN nanowires by Phase-Shifting Electron Holography

〇Kiyotaka Nakano¹, Miko Matsumoto¹, Satoshi Anada¹, Kazuo Yamamoto¹, Si Young Bae², Atsushi Tanaka², Yoshio Honda², Yukari Ishikawa¹, Hiroshi Amano², Tsukasa Hirayama¹ (1.JFCC, 2.Nagoya Univ.)

9:15 AM - 9:30 AM

[20a-331-2] Comparison of carrier recombination in n- and p-type epi layers on GaN substrate

〇(M1)Shuai Zhu¹, Takato Asada¹, Kenji Ito², Kazuyoshi Tomita², Tetsuo Narita², Tetsu Kachi³, Masashi Kato^1,3 (1.Nitech, 2.Toyota Central R&D Labs, 3.Nagoya Univ.)

9:30 AM - 9:45 AM

[20a-331-3] Evaluation of low concentration Carbon in GaN by SIMS

〇Kazue Shingu¹, Masumi Obuchi¹, Richard Hockett², Larry Wang² (1.Nano Science, 2.EAG)

9:45 AM - 10:00 AM

[20a-331-4] Traps related to carbon in MOVPE p-GaN on GaN substrate

〇(M2)Tatsuya Kogiso¹, Hikaru Yoshida¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

10:00 AM - 10:15 AM

[20a-331-5] Effect of wafer off-angles on defect formation in drift layers grown on freestanding GaN substrates

〇Kenji Shiojima¹, Tomohiro Sagawa¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

10:15 AM - 10:30 AM

[20a-331-6] Threshold energy of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita¹, Jun Suda^1,2,3 (1.Kyoto Univ., 2.Nagoya Univ., 3.Nagoya Univ. IMaSS)

10:45 AM - 11:00 AM

△ [20a-331-7] Characterization of Hole Trap Occupancy Ratio under Sub-bandgap Light Irradiation for Accurate Evaluation of Hole Trap Concentration in n-Type GaN

〇Kazutaka Kanegae¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³, Masahiro Horita¹, Tsunenobu Kimoto¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.TOYOTA Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

11:00 AM - 11:15 AM

△ [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaN
Grown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor

〇(M1)Keisuke Sakao¹, Masahiro Horita², Jun Suda^1,2,3, Guanxi Piao⁴, Yuya Yamamoto⁴, Yoshiki Yano⁴, Koh Matsumoto⁴ (1.Nagoya Univ., 2.Kyoto Univ., 3.Nagoya Univ. IMASS, 4.Taiyo Nippon Sanso Corp.)

11:15 AM - 11:30 AM

△ [20a-331-9] Deep Electron Traps in Homoepitaxial N-type GaN Formed by Gamma-ray Irradiation

〇(M1)Keito Aoshima¹, Kazutaka Kanegae², Masahiro Horita², Jun Suda^1,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.Nagoya Univ. IMaSS)

11:30 AM - 11:45 AM

△ [20a-331-10] Changes in Threshold Voltage and Gate Current of p-GaN/AlGaN/GaN HEMTs Induced by Gamma-ray Irradiation

〇Koki Tsurimoto¹, Masahiro Horita², Jun Suda^1,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.Nagoya Univ. IMaSS)

11:45 AM - 12:00 PM

△ [20a-331-11] Temperature Dependence of Barrier Height for Ni/n-GaN Schottky Barrier Diodes with Various Donor Concentrations

〇(M1)Ryosuke Murase¹, Takuya Maeda², Kazutaka Kanegae², Masahiro Horita², Jun Suda^1,2,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.IMaSS)

12:00 PM - 12:15 PM

[20a-331-12] Mapping of facet growth n-GaN Schottky contacts using scanning internal photoemission microscopy

Masataka Maeda¹, 〇Kenji Shiojima¹, Kaori Kurihara² (1.Univ. of Fukui, 2.Mitsubishi Chemical)

12:15 PM - 12:30 PM

[20a-331-13] Defect formation at metal/semiconductor interfaces in electric field; First principles study

〇(M2)Riki Nagasawa¹, Takashi Nakayama¹ (1.Chiba Univ.)

Session information

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

[20a-331-1] High Sensitivity Visualization of Dopant Concentration in GaN nanowires by Phase-Shifting Electron Holography

[20a-331-2] Comparison of carrier recombination in n- and p-type epi layers on GaN substrate

[20a-331-3] Evaluation of low concentration Carbon in GaN by SIMS

[20a-331-4] Traps related to carbon in MOVPE p-GaN on GaN substrate

[20a-331-5] Effect of wafer off-angles on defect formation in drift layers grown on freestanding GaN substrates

[20a-331-6] Threshold energy of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

△ [20a-331-7] Characterization of Hole Trap Occupancy Ratio under Sub-bandgap Light Irradiation for Accurate Evaluation of Hole Trap Concentration in n-Type GaN

△ [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaN
Grown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor

△ [20a-331-9] Deep Electron Traps in Homoepitaxial N-type GaN Formed by Gamma-ray Irradiation

△ [20a-331-10] Changes in Threshold Voltage and Gate Current of p-GaN/AlGaN/GaN HEMTs Induced by Gamma-ray Irradiation

△ [20a-331-11] Temperature Dependence of Barrier Height for Ni/n-GaN Schottky Barrier Diodes with Various Donor Concentrations

[20a-331-12] Mapping of facet growth n-GaN Schottky contacts using scanning internal photoemission microscopy

[20a-331-13] Defect formation at metal/semiconductor interfaces in electric field; First principles study

Authentication

Session information

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

△ [20a-331-7] Characterization of Hole Trap Occupancy Ratio under Sub-bandgap Light Irradiation for Accurate Evaluation of Hole Trap Concentration in n-Type GaN

△ [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaNGrown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor

△ [20a-331-9] Deep Electron Traps in Homoepitaxial N-type GaN Formed by Gamma-ray Irradiation

△ [20a-331-10] Changes in Threshold Voltage and Gate Current of p-GaN/AlGaN/GaN HEMTs Induced by Gamma-ray Irradiation

△ [20a-331-11] Temperature Dependence of Barrier Height for Ni/n-GaN Schottky Barrier Diodes with Various Donor Concentrations

Authentication

△ [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaN
Grown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor