Kenji Shiojima

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

[20a-331-5] Effect of wafer off-angles on defect formation in drift layers grown on freestanding GaN substrates

〇Kenji Shiojima¹, Tomohiro Sagawa¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

12:00 PM - 12:15 PM

[20a-331-12] Mapping of facet growth n-GaN Schottky contacts using scanning internal photoemission microscopy

Masataka Maeda¹, 〇Kenji Shiojima¹, Kaori Kurihara² (1.Univ. of Fukui, 2.Mitsubishi Chemical)

Tue. Sep 18, 2018 4:00 PM - 6:00 PM PA (Event Hall)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[18p-PA6-4] Mapping of neutral-beam etching induced damages on GaN surfaces using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Tetsuya Suemitsu², Takuya Ozaki³, Seiji Samukawa³ (1.Univ. of Fukui, 2.CIES, Tohoku Univ., 3.IFS, Tohoku Univ.)

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