Masahiro Horita

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

10:15 AM - 10:30 AM

[20a-331-6] Threshold energy of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita¹, Jun Suda^1,2,3 (1.Kyoto Univ., 2.Nagoya Univ., 3.Nagoya Univ. IMaSS)