Ryosuke Murase

→ Search for Ryosuke Murase in Google Scholar

Speaker, Author, Co-Author

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

11:45 AM - 12:00 PM

△ [20a-331-11] Temperature Dependence of Barrier Height for Ni/n-GaN Schottky Barrier Diodes with Various Donor Concentrations

〇(M1)Ryosuke Murase¹, Takuya Maeda², Kazutaka Kanegae², Masahiro Horita², Jun Suda^1,2,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.IMaSS)