Keisuke Sakao

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-331-1~13] 13.7 Compound and power electron devices and process technology

11:00 AM - 11:15 AM

△ [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaN
Grown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor

〇(M1)Keisuke Sakao¹, Masahiro Horita², Jun Suda^1,2,3, Guanxi Piao⁴, Yuya Yamamoto⁴, Yoshiki Yano⁴, Koh Matsumoto⁴ (1.Nagoya Univ., 2.Kyoto Univ., 3.Nagoya Univ. IMASS, 4.Taiyo Nippon Sanso Corp.)