[20p-331-1~13] 13.7 Compound and power electron devices and process technology

[20p-331-6] Anisotropic wet etching of selectively grown GaN for applications to three dimensional channel transistors

〇Hayato Mukai¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech., 2.AIST)

Keywords:three-dimensional channel transistor, gan