[20a-331-1~13] 13.7 Compound and power electron devices and process technology

[20a-331-1] High Sensitivity Visualization of Dopant Concentration in GaN nanowires by Phase-Shifting Electron Holography

〇Kiyotaka Nakano¹, Miko Matsumoto¹, Satoshi Anada¹, Kazuo Yamamoto¹, Si Young Bae², Atsushi Tanaka², Yoshio Honda², Yukari Ishikawa¹, Hiroshi Amano², Tsukasa Hirayama¹ (1.JFCC, 2.Nagoya Univ.)

Keywords:Electron Holography, Nitride semiconductor