Tatsuya Oyobiki

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 3:00 PM - 6:45 PM CE (Century Hall)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

3:45 PM - 4:00 PM

△ [19p-CE-7] Characterization of Al₂O₃ MOS structures fabricated on high-temperature annealed GaN surfaces

〇Tatsuya Oyobiki¹, Tamotsu Hashizume¹ (1.RCIQE. Hokkaido Univ.)