[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

△ [19p-CE-17] Characterizations of Mg ion implantation in GaN at high-temperature

〇Masahiro Takahashi¹, Atsushi Tanaka^2,3, Shigeyoshi Usami¹, Yuto Ando¹, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMASS, 3.NIMS, 4.Nagoya Univ. ARC, 5.NU VBL)

Keywords:ion implantation