The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

Wed. Sep 19, 2018 3:00 PM - 6:45 PM CE (Century Hall)

Masashi Kato(NITech), Taketomo Sato(Hokkaido Univ.)

3:00 PM - 3:30 PM

[19p-CE-5] [JSAP Paper Award Speech] Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hajime Fujikura1, Taichiro Konno1, Takehiro Yoshida1, Fumimasa Horikiri1 (1.SCIOCS)

Keywords:JSAP Paper Award