[21a-331-1~12] 13.7 Compound and power electron devices and process technology

△ [21a-331-10] Fabrication of enhancement-mode AlGaN/GaN HEMTs using an AlGaN regrown layer

〇(M2)Keito Kanatani¹, Akio Yamamoto¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

Keywords:GaN, Vertical HEMT, Normally-off

The fabrication of vertical AlGaN/GaN HEMT, as an alternative of vertical GaN-based MIS-FET having problems such as low mobility and large hysteresis, were investigated. Based on the evaluation of AlGaN/GaN hetero-structures prepared with AlGaN regrowth on RIE-GaN surfaces, the fabrication processes of the vertical device were optimized. As a result of that, a device with a drain current higher than 0.15 A/mm and normally-off operation was realized.