The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

Thu. Sep 20, 2018 1:45 PM - 5:15 PM 331 (International Conference Room)

Kenji Shiojima(Univ. of Fukui), Masashi Kato(NITech)

4:00 PM - 4:15 PM

[20p-331-9] Excellent potential of photoelectrochemical (PEC) etching for the vertical GaN superjunction devices

FUMIMASA HORIKIRI1, Hiroshi Ohta2, Naomi Asai2, Yoshinobu Narita1, Takehiro Yoshida1, Tomoyoshi Mishima2 (1.SCIOCS, 2.Hosei Univ.)

Keywords:GaN, Photoelectrochemical, Deep etching

In this study, we focused on the deep etching of GaN by photoelectrochemical (PEC). We succeeded to fabricate the GaN vertical dot structure which has over 20um in height with 90um in diameter. The estimated etching selectivity between the mask and GaN was over 400 and the amount of the side-etching was less than 1um. We will show you several example of the vertical etched structure by the PEC etching technology.