[20p-331-1~13] 13.7 Compound and power electron devices and process technology

[20p-331-9] Excellent potential of photoelectrochemical (PEC) etching for the vertical GaN superjunction devices

〇FUMIMASA HORIKIRI¹, Hiroshi Ohta², Naomi Asai², Yoshinobu Narita¹, Takehiro Yoshida¹, Tomoyoshi Mishima² (1.SCIOCS, 2.Hosei Univ.)

Keywords:GaN, Photoelectrochemical, Deep etching

In this study, we focused on the deep etching of GaN by photoelectrochemical (PEC). We succeeded to fabricate the GaN vertical dot structure which has over 20um in height with 90um in diameter. The estimated etching selectivity between the mask and GaN was over 400 and the amount of the side-etching was less than 1um. We will show you several example of the vertical etched structure by the PEC etching technology.