Daiki Hosomi

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21a-331-1~12] 13.7 Compound and power electron devices and process technology

11:00 AM - 11:15 AM

△ [21a-331-8] Device characteristics of AlGaN-channel HFETs employing quaternary AlGaInN barrier layers

〇Daiki Hosomi¹, Keita Furuoka¹, Heng Chen¹, Toshiharu Kubo¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)