Device characteristics of AlGaN-channel HFETs employing quaternary AlGaInN barrier layers

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 331 (International Conference Room)

Tetsuo Narita(Toyota Central R&D Labs., Inc.)

11:00 AM - 11:15 AM

〇Daiki Hosomi¹, Keita Furuoka¹, Heng Chen¹, Toshiharu Kubo¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

Keywords:AlGaInN, AlGaN-channel HFET