[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

[19p-CE-9] Synchrotron Radiation XPS Study of Thermal Oxidation of SiO₂/p-GaN Interface

〇Takahiro Yamada¹, Daiki Terashima¹, Mikito Nozaki¹, Hisashi Yamada², Tokio Takahashi², Mitsuaki Shimizu², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST, 3.JAEA)

Keywords:p-GaN, Thermal oxidation, XPS