[21p-331-1~8] 13.7 Compound and power electron devices and process technology

[21p-331-3] Consideration on the Impact of Oxygen Annealing on SiO₂/β-Ga₂O₃ MOS Interface Characteristics

Eiki Suzuki¹, Mizuki Nishida¹, 〇Koji Kita¹ (1.Univ. of Tokyo)

Keywords:Ga2O3, MOS characteristics, power device

For the control of MOS characteristics on Ga₂O₃, it would be important to suppress the deterioration caused by both the oxygen deficiency and the excess oxidation of Ga₂O₃. In this study we investigated the effects of O₂ annealing with various conditions on the characteristics of SiO₂/Ga₂O₃ MOS capacitors, fabricated by the O2 annealing of amorphous Si layer deposited on β-Ga₂O₃ wafer. The impacts of those annealing processes on the chemical states of Ga was studied by XPS.