The 79th JSAP Autumn Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

Wed. Sep 19, 2018 3:00 PM - 6:45 PM CE (Century Hall)

Masashi Kato(NITech), Taketomo Sato(Hokkaido Univ.)

5:45 PM - 6:00 PM

[19p-CE-14] Damage characterization of GaN substrate with hot implant process by TEM(２)

〇Junko Maekawa1, Hitoshi Kawanowa1, Masahiko Aoki1, Katsumi Takahiro2, Toshiyuki Isshiki2 (1.Ion Technology Center Co.,Ltd, 2.Kyoto Institute of Technology)

Keywords:GaN, Hot implant, Rapid thermal annealing

Hot implant process of Mg has been reported as p- type dopant method for GaN substrate. We have evaluated the damage of GaN substrate with hot implant of Mg by TEM. We report the damage before and after annealing on GaN substrate induced by the implantation based on the detailed TEM observation.