Chiahung Lin

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 1:45 PM - 4:00 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21p-331-1~8] 13.7 Compound and power electron devices and process technology

2:00 PM - 2:15 PM

[21p-331-2] Vertical Ga₂O₃ Schottky Barrier Diodes with a Guard Ring Fabricated by Using Nitrogen-Ion Implantation

〇Chiahung Lin¹, ManHoi Wong¹, Mayuko Sato², Nao Takekawa², Keita Konishi², Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. of Agri. & Tech.)