[21p-331-1~8] 13.7 Compound and power electron devices and process technology

[21p-331-2] Vertical Ga₂O₃ Schottky Barrier Diodes with a Guard Ring Fabricated by Using Nitrogen-Ion Implantation

〇Chiahung Lin¹, ManHoi Wong¹, Mayuko Sato², Nao Takekawa², Keita Konishi², Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. of Agri. & Tech.)

Keywords:Ga2O3, guard ring Schottky barrier diode

Guard ring (GR) engineering was employed for vertical Ga₂O₃ Schottky barrier diodes (SBDs) to improve the breakdown voltage (V_br) by eliminating electric field concentration at the edge of the anode electrode. The GR was formed by nitrogen-ion implantation doping since nitrogen is expected to behave as a deep acceptor in Ga₂O₃. The GR-SBD showed a V_br of 1.5 times larger than that of a SBD with no edge termination structure fabricated on the same substrate. This result indicates that the GR successfully enhanced the V_br due to redistribution of the peak electric field concentrated at the anode edge.