[20a-331-1~13] 13.7 Compound and power electron devices and process technology

[20a-331-6] Threshold energy of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita¹, Jun Suda^1,2,3 (1.Kyoto Univ., 2.Nagoya Univ., 3.Nagoya Univ. IMaSS)

Keywords:gallium nitride, deep level

We have investigated deep level traps in n-type GaN homoepitaxially grown by MOVPE where point defects are intentionally introduced. In this study, we examined irradiation energy dependence of the deep levels EE1 and EE2, which observed in electron-beam irradiated n-GaN. It was revealed that EE1 and EE2a, which is a part of EE2, were annihilated when the irradiation energy was decreased down to 100 keV. We can speculate that the origins of EE1 and EE2a are V_N and N_I, respectively and the threshold formation energy of these point defects is from 100 to 137 keV.