[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-13] Influence of surface cleaning on electrical characteristics of β-Ga₂O₃/Al₂O₃/Pt MOS capacitors

〇(B)Masafumi Hirose^1,2, Toshihide Nabatame², Kazuya Yuge^1,2, Erika Maeda^1,2, Akihiko Ohi², Naoki Ikeda², Yoshihiro Irokawa², Yasuo Koide², Tomoji Ohishi¹ (1.SIT, 2.NIMS)

Keywords:Ga2O3, MOS capacitor

We investigated the Influence of surface cleaning in SPM and BHF solutions on electorical characteristics of β-Ga₂O₃/Al₂O₃/Pt MOS capacitors. The capacitor after cleaning in BHF solutions has larger V_fb hysteresis than in SPM. Compared with those capacitors, V_fb shifted positively on the capacitor after cleaning in BHF. From those result, it is considered the defect is increased at β-Ga₂O₃/Al₂O₃ interface with BHF surface cleaning.
And, we observed surface roughness of β-Ga₂O₃ substrate after cleaning in SPM or BHF solutions with AFM. The roughness is increased by BHF treatment, and it is considered the roughness affect V_fb ,etc.