[18p-PB1-1~73] 10 Spintronics and Magnetics (Poster)

▲ [18p-PB1-23] Magnetic interaction in magnetic tunnel junction array

〇Hitoshi Kubota¹, Minori Goto², Kazuki Takahashi², Kay Yakushiji¹, Tomohiro Taniguchi¹, Sumito Tsunegi¹, Atsushi Sugihara¹, Akio Fukushima¹, Yoshishige Suzuki^2,3 (1.AIST, 2.Osaka Univ., 3.CSRN)

Keywords:magnetic tunnel junction array, magnetic interaction, magnetization process

We studied magnetic interaction between two magnetic tunnel junctions located closely. The junctions had a stacking structure of IrMn/CoFe/Ru/CoFeB/MgO/CoFeB/MgO/Ta, which was patterned into elliptical shape of 150 x 50 nm and 450 nm x 150 nm, aligned along the long axes. The separation between the cells were varied with 50 nm and 600 nm. With decreasing the separation MR loop shape changed from 2-step staircase representing individual magnetization reversal (separation>100 nm) to 1-step sharp transition representing collaborative magnetization reversal (separation < 100 nm). Magnetization reversal process in the pair of MTJ was greatly influenced by the magnetic interaction in short separation.