[18p-PB1-1~73] 10 Spintronics and Magnetics (Poster)

△ [18p-PB1-32] Estimation of interface trap states density in Si(100)/MgO structure for spin injection into Silicon

〇Takeo Koike¹, Mikihiko Oogane¹, Masakiyo Tsunoda¹, Yasuo Ando¹ (1.Tohoku Univ.)

Keywords:Spin injection

Spin transports between two ferromagnetic (FM) electrodes through semiconductor (SC) have been demonstrated by many groups using local/non-local Hanle and spin-valve measurements. However, the observed non-local spin signals were considerably smaller than predicted value from expected spin polarization of FM electrodes. The influence of interface trap states at the SC/Insulator interface on spin transport in real FM/Insulator/SC junction is not well understood. In this work, we prepared Si(100)/MgO/Ta MOS capacitors with RF magnetron sputtering and EB evaporation methods and investigated interface trap state density for the high efficient spin injection into silicon.