[18p-PB1-1~73] 10 Spintronics and Magnetics (Poster)

▲ [18p-PB1-36] Anomalous Hall Effect in Epitaxial Thin Films of Mn₂VAl Full-Heusler Alloy

〇Kenji Fukuda¹, Mikihiko Oogane¹, Masakiyo Tsunoda¹, Yasuo Ando¹ (1.Tohoku Univ.)

Keywords:Heusler alloy, Anomalous Hall effect, Ferrimagnet

Mn-based full-Heusler ferrimagnet, Mn₂VAl may exhibit specific behavior in anomalous Hall effect (AHE) as compared to well-studied Co-based full-Heusler alloys because the DOS in spin-down electrons for Mn₂VAl consists of the d orbital band at the Fermi level. In this study, AHE in epitaxial thin films of Mn₂VAl was investigated. The measured anomalous Hall resistivity of Mn₂VAl was about 15 times as high as that of a Co-based full-Heusler alloy. This relatively high anomalous Hall resistivity of Mn₂VAl may be caused by d band at the Fermi level.