[18p-PB1-1~73] 10 Spintronics and Magnetics (Poster)

▲ [18p-PB1-64] Fabrication of fully epitaxial magnetic tunnel junctions with rock-salt type ZnO/MgO bilayer tunnel barrier

〇Hidekazu Saito¹, Kon Shintaro^1,2, Narayananellore Sai Krishna³, Norihiro Matsuo^1,2, Naoki Doko^1,2, Yukiko Yasukawa², Shinji Yuasa¹ (1.AIST, 2.Chiba Inst. of Tech., 3.NIMS)

Keywords:magnetic tunnel junction, zinc oxide, epitaxial growth

Fully epitaxial ferromagnet/semiconductor/ferromagnet heterojunctions is one of the fundamental building blocks of a vertical-type spin metal-oxide-semiconductor field-effect transistor. ZnO is a typical oxide semiconductor and has a wurtzite type crystal structure. It has been recently demonstrated that a thin ZnO film with a rock-salt (RS) crystal structure can be epitaxial grown on MgO(001). In this study, we examined to grow fully epitaxial Fe/RS-ZnO/MgO/Fe structure and conducted a detailed investigation on its structural properties.