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[18p-PB3-70] CVD growth of graphene on polycrystalline Cu substrate: effect of metal mask on domain size
Keywords:graphene, Chemical vapar deposition, metal mask
Graphene is a single atomic sheet of carbon with extremely high carrier mobility.a thickness of one atom layer, which has the property of flowing electricity. Chemical vapor deposition (CVD) is one of the methods for obtaining graphene. Graphene obtainegrownd by this methodCVD, is generally polycrystalline, and its carrier mobility degrades and the electron mobility decreases at grain boundaries. By increasing the size of single crystal graphene domains, the degradation is avoidable. Therefore, it is desirable to increase the areasize of the crystal domain. In this study, we performed that CVD growth of graphene on metal masked copper substrates. Tantalum and nickel masks, which dissolves hydrogen and carbon respectively, were used as metal masks, and the effects of the metal masks on graphene growth was investigated the effect on domain size by carrying out CVD under the condition that tantalum which dissolves hydrogen and nickel metal mask which dissolves carbon are placed on a copper substrate.