The 79th JSAP Autumn Meeting, 2018

Presentation information

Poster presentation

17 Nanocarbon Technology » 17 Nanocarbon Technology (Poster)

[18p-PB3-1~95] 17 Nanocarbon Technology (Poster)

Tue. Sep 18, 2018 4:00 PM - 6:00 PM PB (Shirotori Hall)

4:00 PM - 6:00 PM

[18p-PB3-76] Effect of the interface on the mobility of graphene on SiC

〇(B)Ryotaro Sakakibara1, Kenji Kawahara2, Hiroki Ago2, Wataru Norimatsu1 (1.Nagoya Univ., 2.Kyushu Univ. GIC)

Keywords:graphene, carrier mobility, transfer

Graphene grown on SiC has an interfacial layer, called the buffer layer, between graphene and SiC, which degrades the high temperature mobility of graphene. For understanding the effect of the buffer layer on the carrier mobility of graphene, we investigated the electronic properties of CVD-grown graphene transferred onto the buffer layer. Transferred graphene exhibited very weak electronic interaction from the buffer layer, compared with epitaxially grown graphene on SiC.