[18p-PB3-1~95] 17 Nanocarbon Technology (Poster)

[18p-PB3-91] High mobility devices with high-quality CVD-grown monolayer WS₂ flakes

〇(M1)Akihiro Ueda¹, Takato Hotta¹, Yosuke Uchiyama¹, Yasumitsu Miyata², Kenji Watanabe³, Takashi Taniguchi³, Hisanori Shinohara¹, Ryo Kitaura¹ (1.Nagoya Univ., 2.Tokyo Metro. Univ., 3.NIMS)

Keywords:transition metal dichalcogenide

The atomic layer of transition metal dichalcogenide (TMD) is an ultrathin semiconductor of 3 atom thicknesses and shows an electromagnetic response unlike the bulk material. The CVD-grown TMD has some merit, for example large size and heterostructure with clean interface. But it has been said that it was not suitable for a high mobility device because of a lot of defects. In this study, I aimed at the realization of high mobility device fabrication method using CVD-grown TMD.