[18p-PB3-1~95] 17 Nanocarbon Technology (Poster)

[18p-PB3-94] Impact of SAM Gate Dielectric on Mobility in MoS₂ FET with Gated Four-Probe Method

〇Takamasa Kawanago¹, Tomoaki Oba¹, Shunri Oda¹ (1.Tokyo Tech. QNERC)

Keywords:self-assembled monolayer, transition metal dichalcogenides, field-effect transistor