[19a-131-1~11] 15.7 Crystal characterization, impurities and crystal defects

[19a-131-5] Evaluation of carrier density of GaN crystal using THz wave and Raman scattering spectroscopy

〇Hidekazu Yamamoto¹, Yuki Honma¹, Yuki Ogura¹, Seigo Ohno^2,3, Hiroaki Minamide², Hiromasa Ito² (1.Chiba Inst. of Tech., 2.RIKEN, 3.Tohoku Univ.)

Keywords:GaN, THz wave, Raman scattering spectroscopy

We evaluated carrier density of GaN crystal using THz wave and Raman scattering spectroscopy. As a result, good correlation was obtained.